Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem
نویسندگان
چکیده
1. Groupe de Physique des Matériaux, UMR 6634 CNRS, University and INSA of Rouen, Normandie University, 76800 St. Etienne du Rouvray, France 2. Institute of Physics (IPhys), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland 3. Laboratoire de Photonique et Nanostructures CNRS, Université Paris-Saclay, 91460 Marcoussis, France. 4. Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Saclay, 91405 Orsay, France 5. Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, UPR10 CNRS, 06560 Valbonne, France
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